DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delive

Posted on September 13, 2026
By Business News Today
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In brief

India's Defence Research and Development Organisation achieves a significant milestone in semiconductor innovation by successfully developing indigenous Gallium Nitride technology. The compact 3.5×3 mm GaN chips represent a breakthrough in defence electronics, offering superior performance characteristics compared to conventional silicon-based components. This achievement strengthens India's strategic autonomy in advanced radar systems and electronic warfare capabilities, reducing dependency on foreign semiconductor suppliers while accelerating the nation's technological self-sufficiency in critical defence infrastructure.

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DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delive

India's Defence Research and Development Organisation has made remarkable progress with the successful demonstration of cutting-edge high-frequency defence technology. This advancement is key to strengthening national security by fortifying next-generation radar and electronic warfare systems. The use of Gallium Nitride chips, known for their exceptional power and speed compared to traditional silicon, highlights the country's journey towards semiconductor self-reliance in defence applications.